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| Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features * High breakdown voltage (VCBO=1000V). * High reliability (Adoption of HVP process). * Adoption of MBIT process. Package Dimensions unit:mm 2069B [2SC5420] 0.8 10.2 4.5 1.3 9.9 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25C 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD Conditions 2.7 Ratings 1000 450 9 5 10 1.75 50 150 -55 to +150 1.4 Unit V V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=450V, IE=0 VCE=1000V, RBE=0 450 1.0 1.0 1.5 Conditions Ratings min typ max 10 1.0 Unit A mA V mA V V VCEO(sus) IC=100mA, IB=0 IEBO VEB=9V, IC=0 VCE(sat) IC=2.5A, IB=0.5A VBE(sat) IC=2.5A, IB=0.5A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21599TH (KT)/O1397TS (KOTO) TA-1037 No.5762-1/4 2SC5420 Continued from preceding page. Parameter DC Current Gain Storage Time Fall Time Symbol hFE1 hFE2 tstg tf Conditions VCE=5V, IC=0.3A VCE=5V, IC=2.0A IC=2.5A, IB1=0.5A, IB2=-1.0A IC=2.5A, IB1=0.5A, IB2=-1.0A Ratings min 30 10 2.5 0.15 s s ty p 40 max 50 Unit Switching Time Test Circuit RC IB1 VOUT IB2 VCC 0.9 VOUT VOUT 0.1VOUT tstg tf IB1 IB2 10 I C - VCE 6 I C - VBE VCE =5V Collector Current, IC - A 2.0A 6 1.8A 1.2A 1.6A 1.4A 1.0A Collector Current, IC - A 8 5 4 4 0.4A 0.2A 2 Ta= 120 C 25C 0 0.2 0.4 0.6 0.8 0.8A 0.6A 3 2 1 0 IB =0 2 4 6 8 10 0 0 -40 1.0 C 1.2 1.4 Collector-to-Emitter Voltage, VCE - V Base-to-Emitter Voltage, VBE - V Collector-to-Emitter Saturation Voltage, VCE(sat) - V 100 7 5 3 hFE - I C Ta=120C 25C -40C VCE =5V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 VCE(sat) - I C IC /IB =5 DC Current Gain, hFE 2 10 7 5 3 2 1.0 7 5 3 Ta =-40C 25C 5 120C 2 3 5 7 1.0 2 3 5 7 10 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 7 0.1 Collector Current,IC - A Collector Current,IC - A No.5762-2/4 2SC5420 Base-to-Emitter Saturation Voltage, VCE(sat) - V 5 3 2 VBE(sat) - I C IC /IB =5 10 7 5 3 2 1.0 7 5 3 2 SW Time - I C VCC = 200V IC /IB1=5 IB2 / IB1 =2 R load Switching Time, SW Time - s t stg 1.0 7 5 3 2 Ta=-40C 25C 120C tf 0.1 7 5 0.1 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Collector Current,IC - A 10 7 Collector Current,IC - A VCC =200V IC =2.5A IB1 =0.5A R load 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 SW Time - I B2 t stg Forward Bias A S O ICP IC PT<50s Switching Time, SW Time - s 5 3 2 1.0 7 5 3 2 0.1 7 5 Collector Current,IC - A 10 0 s s 0 30 s tio 1m ra pe ms C o 10 D tf n 7 0.1 2 3 5 7 1.0 2 3 5 3 1Pulse 2 23 5 Tc=25C 7 10 2 3 5 7 100 2 3 5 7 Base Current, IB2 - A 3 2 10 7 5 3 2 1.0 7 5 3 L=200H 2 IB2 =-1A Tc=25C 1 pulse 7 100 2 3 5 7 1000 2 3 Collector-to-Emitter Voltage, VCE - V 2.0 1.75 1.6 Reverse Bias A S O Collector Dissipation, PC - W P C - Ta Collector Current,IC - A 1.2 No he at sin k 0.8 0.4 0.1 5 0 0 20 40 60 80 100 120 140 160 Collector-to-Emitter, VCE - V 60 Ambient Temperature, Ta - C P C - Tc Collector Dissipation, PC - W 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc - C No.5762-3/4 2SC5420 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 1999. Specifications and information herein are subject to change without notice. PS No.5762-4/4 |
Price & Availability of 2SC5420
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